Panasonic Network Card 2SC3130 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors  
2SC3130  
Silicon NPN epitaxial planar type  
For high-frequency amplification/oscillation/mixing  
+0.10  
–0.05  
0.40  
+0.10  
–0.06  
0.16  
Features  
3
High transition frequency fT  
Small collector output capacitance (Common base, input open cir-  
cuited) Cob and reverse transfer capacitance (Common emitter) Crb  
Mini type package, allowing downsizing of the equipment and au-  
tomatic insertion through the tape packing and the magazine pack-  
ing  
1
2
(0.95) (0.95)  
1.9 0.1  
+0.20  
2.90  
–0.05  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
15  
1: Base  
2: Emitter  
3: Collector  
10  
V
3
50  
V
EIAJ: SC-59  
Mini3-G1 Package  
Collector current  
IC  
PC  
Tj  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
150  
Marking Symbol: 1S  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
10  
3
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
IC = 2 mA, IB = 0  
IE = 10 µA, IC = 0  
V
VCB = 10 V, IE = 0  
1
µA  
1
Forward current transfer ratio *  
hFE  
VCE = 4 V, IC = 5 mA  
hFE2: VCE = 4 V, IC = 100 µA  
hFE1: VCE = 4 V, IC = 5 mA  
75  
220  
1.60  
2
hFE ratio *  
hFE  
0.75  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 20 mA, IB = 4 mA  
0.5  
2.5  
V
GHz  
pF  
fT  
VCB = 4 V, IE = −5 mA, f = 200 MHz  
1.4  
1.9  
1.4  
Collector output capacitance  
Cob  
VCB = 4 V, IE = 0, f = 1 MHz  
(Common base, input open circuited)  
Reverse transfer capacitance  
(Common emitter)  
Crb  
VCB = 4 V, IE = 0, f = 1 MHz  
0.45  
pF  
Collector-base parameter  
rbb' • CC VCB = 4 V, IE = −5 mA, f = 31.9 MHz  
11  
ps  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Rank classification  
*
Rank  
P
Q
hFE  
75 to 130  
110 to 220  
2: hFE = hFE2 / hFE1  
*
Publication date: February 2003  
SJC00125BED  
1
 
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  
 

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